SI2315BDS product summary v ds (v) r ds(on) ( ) i d (a) 0.050 @ v gs = - 4.5 v - 3.85 -12 0.065 @ v gs = - 2.5 v - 3.4 0.100 @ v gs = - 1.8 v - 2.7 g s d top view 2 3 to-236 (sot-23) 1 SI2315BDS *(m5) *marking code ordering information: SI2315BDS-t1 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 sec steady state unit drain-source voltage v ds -12 v gate-source voltage v gs 8 v continuous drain current (t j = 150 c) a t a = 25 c i d - 3.85 - 3.0 continuous drain current (t j = 150 c) a t a = 70 c i d - 3.0 - 2.45 a pulsed drain current a i dm -12 a continuous source current (diode conduction) a i s - 1.0 - 0.62 power dissipation a t a = 25 c p d 1.19 0.75 w power dissipation a t a = 70 c p d 0.76 0.48 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 5 sec. r 85 105 maximum junction-to-ambient a steady state r thja 130 166 c/w maximum junction-to-foot (drain) steady state r thjf 60 75 notes a. surface mounted on fr4 board. b. t 5 sec. product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
specifications (t j = 25 c unless otherwise noted) limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = - 10 a -12 v gate-threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 0.45 - 0.90 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = - 12 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = - 12 v, v gs = 0 v, t j = 55 c -10 a on state drain current a i d( ) v ds - 5 v, v gs = - 4.5 v -6 a on-state drain current a i d(on) v ds - 5 v, v gs = - 2.5 v -3 a v gs = - 4.5 v, i d = - 3.85 a 0.040 0.050 drain-source on-resistance a r ds(on) v gs = - 2.5 v, i d = - 3.4 a 0.050 0.065 () v gs = - 1.8 v, i d = - 2.7 a 0.071 0.100 forward transconductance a g fs v ds = - 5 v, i d = - 3.85 a 7 s diode forward voltage v sd i s = - 1.6 a, v gs = 0 v - 1.2 v dynamic b total gate charge q g 8 15 gate-source charge q gs v ds = - 6 v, v gs = - 4.5 v i d - 3.85 a 1.1 nc gate-drain charge q gd i d -3 . 85 a 2.3 input capacitance c iss 715 output capacitance c oss v ds = - 6 v, v gs = 0, f = 1 mhz 275 pf reverse transfer capacitance c rss 200 switching b turn on time t d(on) 15 20 turn-on time t r v dd = - 6 v, r l = 6 i d - 10 a v gen = - 45 v 35 50 ns turn - off time t d(off) i d - 1 . 0 a , v gen = - 4.5 v r g = 6 50 70 ns t urn- off ti me t f 50 75 notes a. for design aid only, not subject to production testing. b. pulse test: pw 300 s duty cycle 2%. c. switching time is essentially independent of operating temperature. SI2315BDS product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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